| PART |
Description |
Maker |
| SAK-C164CI-8EM SAF-C164CI-8E25MD-STEP SAF-C164CI-8 |
Compact Microcontrollers for Motor-Drive applications
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 25 MHz
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K OTP, 2 K RAM, CAN, Drive Control Unit, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - ROMless, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, enh. Power Saving features, 20 MHz
48Kbyte ROM; 20 (25MHz) MHz; V(dd): -0.5to 6.5V; V(in): -0.5 to 0.5V; 10mA; 1.5W; 16-bit single chip microcontoller
|
Infineon
|
| AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| MRFE6VP61K25HSR6 MRFE6VP61K25HR6 MRFE6VP61K25HR612 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
|
| AFT21S232SR3 AFT21S230SR3 |
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
|
